| 发明名称 |
METHODS FOR REDUCING THE METAL CONTENT IN THE DEVICE LAYER OF SOI STRUCTURES AND SOI STRUCTURES PRODUCED BY SUCH METHODS |
| 摘要 |
Methods for producing silicon on insulator structures with a reduced metal content in the device layer thereof are disclosed. Silicon on insulator structures with a reduced metal content are also disclosed. |
| 申请公布号 |
KR20140018872(A) |
申请公布日期 |
2014.02.13 |
| 申请号 |
KR20137020296 |
申请日期 |
2012.01.27 |
| 申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
GRABBE ALEXIS;FLANNERY LAWRENCE P. |
| 分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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