METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL INGOT

摘要

A method for growing silicon single crystal according to an embodiment of the present invention comprises the steps of: growing silicon single crystal until a solidification rate, which is the rate of polycrystalline silicon solidifying into a single crystal form, is 50%; adjusting the pressure and the argon gas flow ratio in a chamber since the solidification rate is 50% until the solidification rate is 60% by reducing a ratio value which is defined by dividing the pressure value by the argon gas flow; and conducting a tail process after further reducing the pressure or increasing further the argon gas flow compared with the ratio value at the end of the grown ingot after the single crystal growth. The method for growing silicon single crystal including a highly volatile dopant according to another embodiment of the present invention comprises the steps of: growing silicon single crystal until a solidification rate, which is the rate of polycrystalline silicon solidifying into a single crystal form, is 50%; reducing the strength of a magnetic field applied to silicon melt since the solidification rate is 50% until the solidification rate is 60%; and conducting a tail process after further reducing the strength of the magnetic fields compared with the strength of the magnetic field at the end of the grown ingot after single crystal growth. [Reference numerals] (AA) Example; (BB) Comparative example; (CC) Solidification rate (%)