发明名称 |
MANUFACTURING METHOD OF FUNCTIONAL SUBSTRATE AND MANUFACTURE METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a functional substrate which includes a semiconductor thin film with high crystallinity, can perform various deposition processing and fine processing on the semiconductor thin film and can transfer a circuit layer formed by the processing on the other substrate, and to provide a manufacturing method of a semiconductor device with high performance by using the functional substrate.SOLUTION: A semiconductor thin film obtained by forming a peeling layer on a support substrate with high rigidity and separating a part of the semiconductor substrate is arranged on the peeling layer. A flattening film is formed on the peeling layer so that the semiconductor thin film is not peeled during separation processing. The flattening film is heated before the semiconductor substrate is stuck to the flattening film so that a film is prevented from being peeled in a boundary face between the peeling layer and the flattening film with heating processing performed during the separation processing. A stress change due to heating is previously generated in the flattening film. |
申请公布号 |
JP2014029992(A) |
申请公布日期 |
2014.02.13 |
申请号 |
JP20130131582 |
申请日期 |
2013.06.24 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
IIKUBO YOICHI;HANAOKA KAZUYA;NAGAMATSU SHO;FUJII TERUYUKI |
分类号 |
H01L21/02;H01L21/336;H01L27/12;H01L29/786 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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