RELIABLE INTERCONNECT FOR SEMICONDUCTOR DEVICE

摘要

17A method for forming a semiconductor device is presented. A substrate prepared with adielectric layer formed thereon is provided. A sacrificial and a hard mask layer are formed onthe dielectric layer. The dielectric, sacrificial and hard mask layers are patterned to form aninterconnect opening. The interconnect opening is filled with a conductive material to form aninterconnect. The conductive material is processed to produce a top surface of the conductivematerial that is substantially planar with a top surface of the sacrificial layer. The sacrificiallayer is removed. The sacrificial layer protects the dielectric layer during processing of theconductive material.Fig. 1 A method forforming a semiconductor device is presented. A substrate prepared with adielectric layer formed thereon is provided. A sacrificial and a hard masklayer are formed on the dielectric layer. The dielectric, sacrificial andhard mask layers are patterned to form an interconnect opening. Theinterconnect opening is filled with a conductive material to form aninterconnect. The conductive material is processed to produce a top surfaceof the conductive material that is substantially planar with a top surfaceof the sacrificial layer. The sacrificial layer is removed. The sacrificiallayer protects the dielectric layer during processing of the conductivematerial. Fig. 1