| 摘要 |
SPACER FORMATION FOR ARRAY DOUBLE PATTERNINGA method for forming an array area with a surrounding periphery area, wherein a substrate isdisposed under an etch layer, which is disposed under a patterned organic mask defining thearray area and covers the entire periphery area is provided. The patterned organic mask istrimmed. An inorganic layer is deposited over the patterned organic mask where a thickness ofthe inorganic layer over the covered periphery area of the organic mask is greater than athickness of the inorganic layer over the array area of the organic mask. The inorganic layer isetched back to expose the organic mask and form inorganic spacers in the array area, whileleaving the organic mask in the periphery area unexposed. The organic mask exposed in thearray area is stripped, while leaving the inorganic spacers in place and protecting the organicmask in the periphery area.FIG. 119 |
