| 摘要 |
PROBLEM TO BE SOLVED: To provide a hafnium oxide etching composition for performing highly selective etching of hafnium oxide in a process of removing hafnium oxide from a semiconductor element that simultaneously has hafnium oxide and silicon dioxide.SOLUTION: Essential components of the hafnium oxide etching composition are hydrogen fluoride, an acid having two or more fluorine atoms, and water. Further, the composition preferably contains a cationic surfactant, and further preferably has pH of 0.1-4.0. |
