发明名称 SUBSTRATE WITH PIEZOELECTRIC THIN FILM AND PIEZOELECTRIC ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a substrate with a piezoelectric thin film, by which a decrease in the piezoelectric constant dof a piezoelectric element can be suppressed even after a piezoelectric operation is continuously conducted for a long period, in the piezoelectric element comprising a substrate with a piezoelectric thin film including a Pb-free piezoelectric material.SOLUTION: A substrate 1 with a piezoelectric thin film includes a substrate 10 having a first thermal expansion coefficient, and a piezoelectric thin film 16 deposited in a predetermined deposition condition, having a second thermal expansion coefficient, formed on the substrate, and comprising a potassium sodium niobate represented by general formula of (K, Na)NbOwith a perovskite structure. The substrate 1 provided with the piezoelectric thin film 16 formed thereon has a curvature radius of a warping due to the difference between the first and second thermal expansion coefficients of 10 m or more at room temperature.
申请公布号 JP2014030037(A) 申请公布日期 2014.02.13
申请号 JP20130192519 申请日期 2013.09.18
申请人 HITACHI METALS LTD 发明人 SHIBATA KENJI;OKA FUMITO
分类号 H01L41/187;C01G33/00;C23C14/34;H01L41/047;H01L41/08;H01L41/09;H01L41/113;H01L41/18;H01L41/22;H01L41/29;H01L41/316;H01L41/319;H01L41/39 主分类号 H01L41/187
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