发明名称 DOUBLE CONTACTS FOR CARBON NANOTUBES THIN FILM DEVICES
摘要 A method of fabricating a semiconductor device is disclosed. A first contact layer of the semiconductor device is fabricated. An electrical connection is formed between a carbon nanotube and the first contact layer by electrically coupling of the carbon nanotube and a second contact layer. The first contact layer and second contact layer may be electrically coupled.
申请公布号 US2014042392(A1) 申请公布日期 2014.02.13
申请号 US201213585465 申请日期 2012.08.14
申请人 CAO QING;FRANKLIN AARON D.;SMITH JOSHUA T.;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 CAO QING;FRANKLIN AARON D.;SMITH JOSHUA T.
分类号 H01L29/775;B82Y99/00 主分类号 H01L29/775
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