| 发明名称 |
SUBSTRATE TREATING METHOD AND APPARATUS THEREOF |
| 摘要 |
<p>The present invention relates to a substrate treating method and an apparatus thereof. According to one embodiment of the present invention, the substrate treating method includes a step of forming a metal layer on a substrate; and a step of removing particles by processing the substrate by using a buffer solution mixed with an alkali solution and water including CO2. [Reference numerals] (100) First cleaning solution supply unit; (200) Second cleaning solution supply unit; (300) Cleaning solution mixing unit; (400) Spray unit</p> |
| 申请公布号 |
KR20140018746(A) |
申请公布日期 |
2014.02.13 |
| 申请号 |
KR20120085398 |
申请日期 |
2012.08.03 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HEO, JUNG SHIK |
| 分类号 |
H01L21/302;H01L21/336;H01L29/78 |
主分类号 |
H01L21/302 |
| 代理机构 |
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| 主权项 |
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