发明名称 |
TRENCH TRANSISTORS AND METHODS WITH LOW-VOLTAGE-DROP SHUNT TO BODY DIODE |
摘要 |
Methods and systems for power semiconductor devices integrating multiple trench transistors on a single chip. Multiple power transistors (or active regions) are paralleled, but one transistor has a lower threshold voltage. This reduces the voltage drop when the transistor is forward-biased. In an alternative embodiment, the power device with lower threshold voltage is simply connected as a depletion diode, to thereby shunt the body diodes of the active transistors, without affecting turn-on and ON-state behavior. |
申请公布号 |
US2014042535(A1) |
申请公布日期 |
2014.02.13 |
申请号 |
US201313758689 |
申请日期 |
2013.02.04 |
申请人 |
MAXPOWER SEMICONDUCTOR, INC.;MAXPOWER SEMICONDUCTOR, INC. |
发明人 |
DARWISH MOHAMED N.;ZENG JUN;BLANCHARD RICHARD A. |
分类号 |
H01L27/088;H01L29/78 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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