发明名称 |
CONTACT STRUCTURE OF SEMICONDUCTOR DEVICE |
摘要 |
The disclosure relates to a semiconductor device. An exemplary structure for a contact structure for a semiconductor device comprises a substrate comprising a major surface and a cavity below the major surface; a strained material in the cavity, wherein a lattice constant of the strained material is different from a lattice constant of the substrate; a Ge-containing dielectric layer over the strained material; and a metal layer over the Ge-containing dielectric layer. |
申请公布号 |
US2014042500(A1) |
申请公布日期 |
2014.02.13 |
申请号 |
US201213571201 |
申请日期 |
2012.08.09 |
申请人 |
WANN CLEMENT HSINGJEN;YEH LING-YEN;SHIH CHI-YUAN;CHEN YEN-YU;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WANN CLEMENT HSINGJEN;YEH LING-YEN;SHIH CHI-YUAN;CHEN YEN-YU |
分类号 |
H01L23/48;H01L21/20;H01L29/772 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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