发明名称 |
Circuit Pattern with high aspect ratio and Method of Manufacturing the Same |
摘要 |
A method of manufacturing a circuit pattern with high aspect ratio is disclosed. A plurality of parallel lines and supporting lines intersecting the parallel lines are formed. Supporting isolation structures are then formed in the space between the parallel lines and the supporting line for supporting the parallel lines in a later etching process. The parallel lines and the supporting line are then disconnected after the etching process. |
申请公布号 |
US2014041900(A1) |
申请公布日期 |
2014.02.13 |
申请号 |
US201213570253 |
申请日期 |
2012.08.09 |
申请人 |
YU CHIEN-AN;LIN YI-FONG |
发明人 |
YU CHIEN-AN;LIN YI-FONG |
分类号 |
H05K1/02;H05K3/06;H05K3/30 |
主分类号 |
H05K1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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