发明名称 Circuit Pattern with high aspect ratio and Method of Manufacturing the Same
摘要 A method of manufacturing a circuit pattern with high aspect ratio is disclosed. A plurality of parallel lines and supporting lines intersecting the parallel lines are formed. Supporting isolation structures are then formed in the space between the parallel lines and the supporting line for supporting the parallel lines in a later etching process. The parallel lines and the supporting line are then disconnected after the etching process.
申请公布号 US2014041900(A1) 申请公布日期 2014.02.13
申请号 US201213570253 申请日期 2012.08.09
申请人 YU CHIEN-AN;LIN YI-FONG 发明人 YU CHIEN-AN;LIN YI-FONG
分类号 H05K1/02;H05K3/06;H05K3/30 主分类号 H05K1/02
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