| 摘要 |
Amethod of ion implantation comprising: providing a plasmawithin a plasma region of a chamber; positively biasing a first grid plate,wherein the first grid plate comprises a plurality of apertures; negativelybiasing a second grid plate, wherein the second grid plate comprises aplurality of apertures: flowing ions from the plasma in theplasma region through the pertures in the positively-biased first gridplate; flowing at least a portion of the ions that flowedthrough the apertures in the positively-biased first grid plate through theapertures in the negatively-biased second grid plate; and implanting asubstrate with at least a portion of the ions that flowed through theapertures in the negatively-biased second grid plate. Fig. 1 |
