发明名称 |
MEMORY CELLS HAVING A PLURALITY OF RESISTANCE VARIABLE MATERIALS |
摘要 |
Resistance variable memory cells having a plurality of resistance variable materials and methods of operating and forming the same are described herein. As an example, a resistance variable memory cell can include a plurality of resistance variable materials located between a plug material and an electrode material. The resistance variable memory cell also includes a first conductive material that contacts the plug material and each of the plurality of resistance variable materials and a second conductive material that contacts the electrode material and each of the plurality of resistance variable materials. |
申请公布号 |
US2014043894(A1) |
申请公布日期 |
2014.02.13 |
申请号 |
US201213570772 |
申请日期 |
2012.08.09 |
申请人 |
RUSSO UGO;REDAELLI ANDREA;PELLIZZER FABIO;MICRON TECHNOLOGY, INC. |
发明人 |
RUSSO UGO;REDAELLI ANDREA;PELLIZZER FABIO |
分类号 |
H01L47/00;G11C11/00;H01L21/02 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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