发明名称 |
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF FORMING THE SAME |
摘要 |
A high electron mobility transistor (HEMT) includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A source feature and a drain feature are in contact with the second III-V compound layer. A n-type doped region underlies each source feature and drain feature in the second III-V compound layer. A p-type doped region underlies each n-type doped region in the first III-V compound layer. A gate electrode is disposed over a portion of the second III-V compound layer between the source feature and the drain feature. |
申请公布号 |
US2014042446(A1) |
申请公布日期 |
2014.02.13 |
申请号 |
US201213571169 |
申请日期 |
2012.08.09 |
申请人 |
CHIANG CHEN-HAO;CHIU HAN-CHIN;LIU PO-CHUN;CHEN CHI-MING;YU CHUNG-YI;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHIANG CHEN-HAO;CHIU HAN-CHIN;LIU PO-CHUN;CHEN CHI-MING;YU CHUNG-YI |
分类号 |
H01L29/778;H01L21/335;H01L29/20 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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