SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

摘要

Provided is a method for producing a silicon carbide semiconductor device provided with a vertical switching element having a trench gate structure (9), wherein a substrate (1) that has an off angle to a (0001) plane or a (000-1) plane is used, a trench (6) is formed to such a depth that it reaches a drift layer (2) from the surface of a source area (4) through a base area (3) so that side wall surfaces thereof face a (11-20) plane or a (1-100) plane, and a gate oxide film (7) is formed without sacrificing oxidation after the trench (6) is formed.