发明名称 HIGH DENSITY ALIGNED SILICON NANOWIRE
摘要 A simple, economical method of producing nanowire arrays is described. The method produces high density arrays having nanowires with diameters below 10 nm and does not require templating, catalysts, or surface pre/post-treatment. The disclosed methods and systems can be used, for example, for optoelectronic devices and photovoltaic cells, Li-ion batteries, chemical/bio sensors and transistors.
申请公布号 WO2013192623(A3) 申请公布日期 2014.02.13
申请号 WO2013US47394 申请日期 2013.06.24
申请人 NORTHEASTERN UNIVERSITY 发明人 HONG, SANGHYUN;JOON JUNG, YUNG;YOUNG JUNG, HYUN;LEE, SUNG-GOO;YOO, YOUNGJAE
分类号 H01L31/00 主分类号 H01L31/00
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