SEMICONDUCTOR DEVICE AND METHOD OF FORMING INTERCONNECT STRUCTURE OVER SEED LAYER ON CONTACT PAD OF SEMICONDUCTOR DIE WITHOUT UNDERCUTTING SEED LAYER BENEATH INTERCONNECT STRUCTURE

摘要

AbstractSEMICONDUCTOR DEVICE AND METHOD OF FORMING INTERCONNECTSTRUCTURE OVER SEED LAYER ON CONTACT PAD OF SEMICONDUCTOR DIEWITHOUT UNDERCUTTING SEED LAYER BENEATH INTERCONNECT STRUCTUREA semiconductor device has a semiconductor die with a firstconductive layer formed over the die. A first insulating layeris formed over the die with a first opening in the firstinsulating layer disposed over the first conductive layer. Asecond conductive layer is formed over the first insulatinglayer and into the first opening over the first conductivelayer. An interconnect structure is constructed by forming asecond insulating layer over the first insulating layer with asecond opening having a width less than the first opening anddepositing a conductive material into the second opening. Theinterconnect structure can be a conductive pillar or conductivepad. The interconnect structure has a width less than a widthof the first opening. The second conductive layer over thefirst insulating layer outside the first opening is removedwhile leaving the second conductive layer under the interconnectstructure.(Fig. 4)31Abstract SEMICONDUCTOR DEVICE AND METHOD OF FORMING INTERCONNECT STRUCTUREOVER SEED LAYER ON CONTACT PAD OF SEMICONDUCTOR DIE WITHOUT UNDERCUTTING SEEDLAYER BENEATH INTERCONNECT STRUCTURE A semiconductor device has asemiconductor die with a first conductive layer formed over the die. A firstinsulating layer is formed over the die with a first opening in the firstinsulating layer disposed over the first conductive layer. A second conductivelayer is formed over the first insulating layer and into the first openingover the first conductive Layer. An interconnect structure is constructed byforming a second insulating layer over the first insulating layer with asecond opening having a width less than the first opening and depositing aconductive material into the second opening. The interconnect structure can bea conductive pillar or conductive pad. The interconnect structure has a widthless than a width of the first opening. The second conductive layer over thefirst insulating layer outside the first opening is removed while leaving thesecond conductive layer under the interconnect structure. (Fig. 4)