| 摘要 |
<p>The element (200) has an electrical contact layer, a diffusion barrier layer and a catalytic layer to support growth of carbon nanotubes eg. monolayer nanotubes. A dielectric layer e.g. silicon dioxide layer, is formed on a lower conductor (210). An upper conductor (220) is placed on the dielectric layer, and forms a bridge above the lower conductor. A cavity (240) formed in the dielectric layer emerges on the conductors, and forms two holes (243) on both sides of the upper conductor at an emerging level of the cavity on the upper conductor. An independent claim is also included for a method for fabricating an element for inter-connecting two conductors of a microelectronic circuit.</p> |
