| 摘要 |
<p>Disclosed is a method of forming a memory device. The method includes accommodating a wafer substrate, forming a poly stack pattern on the wafer substrate, performing an ion injection process to form a source/drain on the wafer substrate, forming a memory gate and a control gate in a defined poly stack pattern, and forming a control gate in the a control poly stack pattern. Forming the memory gate further includes performing a memory gate recess. [Reference numerals] (102) Forming a poly stack pattern; (104) Deposit an ONO(oxide/nitride/oxide) layer; (106) Forming a memory gate; (108) Etching the memory gate; (110) Removing one of the memory gate; (112) Forming a source/drain; (114) Forming a flash memory device</p> |
