Thin film deposition apparatus and method of depositing thin film using the same

摘要

A thin film deposition apparatus (500) includes a process chamber that includes a reaction space, a plasma generating unit (200), and a sputtering unit (100). The plasma generating unit (200) generates a plasma (PM) in the reaction space. The sputtering unit (100) is independently driven from the plasma generating unit (200) to form an electric field in the reaction space and to perform a sputtering process on a target using the plasma. The plasma can be generated by an induction field or by electron cyclone resonance.