SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

A silicon carbide layer is epitaxially formed on a main surface of a substrate (1). The silicon carbide layer is provided with a trench having a side wall (6) inclined relative to the main surface. The side wall (6) has an off angle of not less than 50° and not more than 65° relative to a {0001} plane. A gate insulating film (8) is provided on the side wall (6) of the silicon carbide layer. The silicon carbide layer includes: a body region (3) having a first conductivity type and facing a gate electrode (9) with the gate insulating film (8) being interposed therebetween; and a pair of regions (2, 4) separated from each other by the body region (3) and having a second conductivity type. The body region (3) has an impurity density of 5 × 10 16 cm -3 or greater. This allows for an increased degree of freedom in setting a threshold voltage while suppressing decrease of channel mobility.