Integrated circuit stack with integrated electromagnetic interference shielding

摘要

An integrated circuit system (201) includes a first device wafer (203) having a first semiconductor layer (205) proximate to a first metal layer including a first conductor disposed within a first metal layer oxide (207) . A second device wafer (211) having a second semiconductor layer (213) proximate to a second metal layer including a second conductor is disposed within a second metal layer oxide (215) . A frontside (235) of the first device wafer is bonded to a frontside (237) of the second device wafer at a bonding interface (223). A conductive path (225, 227) couples the first conductor (209, 219) to the second conductor (217, 221) through the bonding interface. A first metal EMI shield (231) is disposed in one of the first metal oxide layer and second metal layer oxide layer. The first EMI shield is included in a metal layer of said one of the first metal oxide layer and the second metal layer oxide layer nearest to the bonding interface.