| 摘要 |
PROBLEM TO BE SOLVED: To suppress variation in current sense ratio of a semiconductor device with ambient temperature without large restrictions associated with design of the semiconductor device. SOLUTION: The semiconductor device has a main element region having a plurality of function cells and a sense element region having function cells less than the function cells in the main element region. A second electrode 85 is provided on a surface of the main element region. The temperature coefficient of resistance in the second electrode 85 is made smaller than that in the function cells. Main wiring 85a and Kelvin wiring are connected to the second electrode 85. The Kelvin wiring is connected to an end side part 86 farthest from a position 85b where the main wiring 85a is connected. COPYRIGHT: (C)2010,JPO&INPIT |
