| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can be easily manufactured and can attain higher breakdown voltage than conventional devices, and to provide a manufacturing method for the transistor. SOLUTION: The MOSFET 1 includes an n<SP>+</SP>SiC substrate 10, an n<SP>-</SP>SiC layer 20, a pair of p-wells 21, an n<SP>+</SP>source region 22, a source-contact electrode 80, and a p<SP>+</SP>region 23, formed so as to extend from a region between the n<SP>+</SP>source region 22 and the n<SP>+</SP>SiC substrate 10, to a position contacting the source contact electrode 80 in each of the pair of p-well regions 21, including a higher concentration p-type impurity than that of the p-wells 21. Of the pair of p-wells 21, the distance L<SB>1</SB>between the n<SP>+</SP>source region 22 formed in one p-well 21 and the n<SP>+</SP>source region 22 formed in the other p-well 21 is smaller than the distance L<SB>2</SB>between the p<SP>+</SP>region 23 formed in the one p-well 21 and the p<SP>+</SP>region 23 formed in the other p-well 21. COPYRIGHT: (C)2009,JPO&INPIT |
