ARRAY SUBSTRATE INCLUDING OXIDE THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME

摘要

According the present invention, an array substrate including an oxide thin film transistor includes a substrate; a gate electrode formed on the upper part of the substrate; an gate insulating layer formed on the upper part of the gate electrode; an oxide semiconductor layer formed on the upper part of the gate insulating layer corresponding to the gate electrode, made of indium-gallium-zinc-oxide, and having a first layer on an lower part and a second layer on an upper part; a source and a drain electrode separated from each other and from upper part of the oxide semiconductor layer; and a pixel electrically connected to the drain electrode.