| 摘要 |
1,246,456. Mixed oxide, SiO 2 /TiO 2 , coating. MATSUSHITA ELECTRONICS CORP. 8 Nov. 1968 [22 Nov., 1967], No. 53067/68. Heading C1A. [Also in Division Hl] A PN junction device has a passivating layer including titanium dioxide and silica and containing 5-30% by volume of titanium dioxide. The layer may be homogeneous in which case it can be deposited by pyrolysis of a mixture of tetraethoxysilane and tetra-isopropyltitanate. The mixture, with some oxygen, is carried in a current of nitrogen or argon over the semiconductor surface which is maintained at 250- 500� C. Alternatively the layer may consist of a silica layer covered with titania, with or without an intervening layer of a mixture of the two oxides. |
