发明名称 ATOMIC LAYER DEPOSITION SYSTEM AND METHOD THEREOF
摘要 Disclosed are an atomic layer deposition device and a deposition method for the same. The atomic layer deposition device in accordance with an embodiment of the present invention includes an atomic layer deposition chamber unit in which atomic layer deposition on a substrate supported on a susceptor is performed as raw material precursor and a reaction precursor; a precursor supply unit supplying one among the raw material precursor and the reaction precursor inside the atomic layer deposition chamber unit; a reaction acceleration unit improving reactivity of one among the raw material precursor and the reaction precursor supplied by the precursor supply unit; a precursor scanning unit emitting the other among the raw material precursor and the reaction precursor to the substrate by being installed in the atomic layer deposition chamber unit to be able to relatively move on the substrate; and a scanning driving unit moving the electrode scanning unit by being installed in the atomic layer deposition chamber unit.
申请公布号 KR20140017903(A) 申请公布日期 2014.02.12
申请号 KR20120084701 申请日期 2012.08.02
申请人 SFA ENGINEERING CORP. 发明人 LEE, CHOON SOO;KIM, YOUNG MIN;JEONG, HONG GI
分类号 H01L21/205 主分类号 H01L21/205
代理机构 代理人
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