发明名称 |
Device having reduced bias temperature instability (bti) |
摘要 |
A semiconductor device (100) is disclosed along with methods (10) for manufacturing such a device. In certain embodiments, the semiconductor device includes a source electrode (124) formed using a metal that limits a shift, such as due to bias temperature instability, in a threshold voltage of the semiconductor device during operation. In certain embodiments the semiconductor device may be based on silicon carbide. |
申请公布号 |
EP2696366(A2) |
申请公布日期 |
2014.02.12 |
申请号 |
EP20130179428 |
申请日期 |
2013.08.06 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
MICHAEL, JOSEPH DARRYL;ARTHUR, STEPHEN DALEY;JOHNSON, TAMMY LYNN;LILIENFELD, DAVID ALAN |
分类号 |
H01L21/04;H01L29/66;H01L29/78 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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