发明名称 Apparatus for forming a thin layer a wafer on
摘要 A device for forming a thin film comprises a platen which includes a plurality of susceptors, a process chamber which provides a response space, a gas supply unit which supplies source gas and response gas to the response space, and a transfer robot which performs load and unload operations of wafers. A non-contact chuck is positioned in a robot arm end unit of the transfer robot. The non-contact chuck comprises a cylinder housing, a nozzle, and a guide member. The cylinder housing comprises a lower panel including one or more penetration holes on the center part. The nozzle is arranged on the upper part of the penetration hole inside the housing. The nozzle forms negative pressure for parsing a wafer to the lower part of the housing by spreading compressed air in all directions. The guide member is positioned in the lower part of the housing; restricts the horizontal directional movement of the wafer; guides the wafer to a vertical direction; and restricts an edge part of the wafer to an upper direction so that the wafer does not touch the lower surface of the lower panel. The present invention is provided to prevent the pollution of the wafer caused by the compressed air by not allowing the compressed air to spread to the wafer.
申请公布号 KR101362670(B1) 申请公布日期 2014.02.12
申请号 KR20120069622 申请日期 2012.06.28
申请人 发明人
分类号 H01L21/205 主分类号 H01L21/205
代理机构 代理人
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