| 摘要 |
<P>PROBLEM TO BE SOLVED: To change the threshold voltage of a transistor using stress of a thin film. <P>SOLUTION: The threshold voltage of a transistor can be changed by using stress of a thin film formed on a first semiconductor layer having a first channel formation region and a second semiconductor layer having a second channel formation region. By electrically connecting these to each other, an E/D MOS circuit can be provided. <P>COPYRIGHT: (C)2012,JPO&INPIT |
