发明名称 |
Non-volatile resistive sense memory on-chip cache |
摘要 |
Various embodiments of the present invention are generally directed to a non-volatile resistive sense memory on-chip cache. In accordance with some embodiments, a processing circuit is formed on a first semiconductor substrate. A second semiconductor substrate is affixed to the first semiconductor substrate to form an encapsulated integrated chip package, wherein a non-volatile storage array of resistive sense memory (RSM) cells is formed on the second semiconductor substrate to cache data used by the processing circuit. |
申请公布号 |
US8650355(B2) |
申请公布日期 |
2014.02.11 |
申请号 |
US20080252027 |
申请日期 |
2008.10.15 |
申请人 |
LI HAI;CHEN YIRAN;LIU HONGYUE;HUANG HENRY F.;SEAGATE TECHNOLOGY LLC |
发明人 |
LI HAI;CHEN YIRAN;LIU HONGYUE;HUANG HENRY F. |
分类号 |
G06F12/00;G06F13/00;G06F13/28 |
主分类号 |
G06F12/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|