发明名称 |
Method for growing conformal EPI layers and structure thereof |
摘要 |
A method for forming a conformal buffer layer of uniform thickness and a resulting semiconductor structure are disclosed. The conformal buffer layer is used to protect highly-doped extension regions during formation of an epitaxial layer that is used for inducing mechanical stress on the channel region of transistors. |
申请公布号 |
US8648394(B2) |
申请公布日期 |
2014.02.11 |
申请号 |
US201313777402 |
申请日期 |
2013.02.26 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DUBE ABHISHEK;KOSHY JOPHY STEPHEN |
分类号 |
H01L21/70;H01L21/336;H01L21/338;H01L21/8238 |
主分类号 |
H01L21/70 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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