| 摘要 |
Disclosed is a deposition method comprising heating a precursor before exposing a substrate in the precursor to deposit materials in the substrate using deposition methods (e.g., ALD, MLD, CVD). A reactor for injecting a precursor in a substrate comprises a heater arranged in a passage between a channel connected to a precursor source and a reaction chamber of the reactor. When the precursor passes through the heater, the precursor is heated to the temperature conducted to a deposition process. Alternatively or further to the heater, the reactor injects heated gas mixed with the precursor so that the temperature of the precursor can be raised before the substrate is exposed in the precursor. |
