| 摘要 |
<p>A mask for a semiconductor device according to one embodiment is provided. The mask for a semiconductor device has an arrangement key mask pattern including a first submask pattern arranged in a first direction and a second submask pattern arranged in a second direction non-parallel with the first direction. The first submask pattern and the second submask pattern include multiple minute line patterns which are alternately arranged in parallel with each other. [Reference numerals] (AA) Second direction; (BB) First direction</p> |
