发明名称 INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING
摘要 A semiconductor structure (5), fluid ejection device, and methods for manufacturing the same are provided, such that a contact to a substrate (10) is formed from a conductive layer (30).
申请公布号 CA2581938(C) 申请公布日期 2014.02.11
申请号 CA20052581938 申请日期 2005.09.21
申请人 HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. 发明人 DODD, SIMON;WANG, S. JONATHAN;TOM, DENNIS W.;BRYANT, FRANK R.;MCMAHON, TERRY E.;MILLER, RICHARD TODD;HINDMAN, GREGORY T.
分类号 H01L23/31;B41J2/14;H01L21/31 主分类号 H01L23/31
代理机构 代理人
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