发明名称 Light emitting device having light extraction structure and method for manufacturing the same
摘要 A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.
申请公布号 US8648376(B2) 申请公布日期 2014.02.11
申请号 US201213612343 申请日期 2012.09.12
申请人 CHO HYUN KYONG;KIM SUN KYUNG;JANG JUN HO;LG ELECTRONICS INC. 发明人 CHO HYUN KYONG;KIM SUN KYUNG;JANG JUN HO
分类号 H01L33/02;H01L33/10;H01L33/22;H01L33/32 主分类号 H01L33/02
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