发明名称 Temporary wafer bonding method for semiconductor processing
摘要 A method for temporary wafer bonding employs a curable adhesive composition and a degradation agent combined with the curable adhesive composition. The adhesive composition may include (A) a polyorganosiloxane containing an average of at least two silicon-bonded unsaturated organic groups per molecule, (B) an organosilicon compound containing an average of at least two silicon-bonded hydrogen atoms per molecule in an amount sufficient to cure the composition, (C) a catalytic amount of a hydrosilylation catalyst, and (D) a base. The film prepared by curing the composition is degradable and removable by heating.
申请公布号 US8647964(B2) 申请公布日期 2014.02.11
申请号 US201013583007 申请日期 2010.12.15
申请人 HARKNESS BRIAN;DOW CORNING CORPORATION 发明人 HARKNESS BRIAN
分类号 H01L21/30 主分类号 H01L21/30
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