发明名称 |
Semiconductor device and method for manufacturing the same |
摘要 |
An object is to increase the aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate. The driver circuit portion includes a channel-etched thin film transistor for a driver circuit, in which a source electrode and a drain electrode are formed using a metal and a channel layer is formed using an oxide semiconductor, and a driver circuit wiring formed using a metal. The display portion includes a channel protection thin film transistor for a pixel, in which a source electrode and a drain electrode are formed using an oxide conductor and a semiconductor layer is formed using an oxide semiconductor, and a display portion wiring formed using an oxide conductor. The thin film transistors provided in the semiconductor device are formed with a resist mask formed using a multi-tone mask. |
申请公布号 |
US8648343(B2) |
申请公布日期 |
2014.02.11 |
申请号 |
US20100839519 |
申请日期 |
2010.07.20 |
申请人 |
YAMAZAKI SHUNPEI;SAKATA JUNICHIRO;MIYAKE HIROYUKI;KUWABARA HIDEAKI;KAWAMATA IKUKO;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;SAKATA JUNICHIRO;MIYAKE HIROYUKI;KUWABARA HIDEAKI;KAWAMATA IKUKO |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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