| 发明名称 |
Trench power field effect transistor device and method |
| 摘要 |
In one embodiment, a structure for a trench power field effect transistor device with controlled, shallow, abrupt, body contact regions. |
| 申请公布号 |
US8648412(B1) |
申请公布日期 |
2014.02.11 |
| 申请号 |
US201213487479 |
申请日期 |
2012.06.04 |
| 申请人 |
BURKE PETER A.;SUWHANOV AGAJAN;VENKATRAMAN PRASAD;SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
发明人 |
BURKE PETER A.;SUWHANOV AGAJAN;VENKATRAMAN PRASAD |
| 分类号 |
H01L29/76;H01L29/94 |
主分类号 |
H01L29/76 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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