发明名称 Method for manufacturing the highly efficient organic thin film transistors
摘要 PURPOSE: An organic vapor phase jet printing device for manufacturing a high performance organic thin film transistor, a manufacturing method of the high performance organic thin film transistor, and the high performance organic thin film transistor manufactured using the same are provided to greatly improve power efficiency while minimizing constant resistance and an injection energy barrier. CONSTITUTION: A first storage chamber(210) and a second storage chamber(230) store an organic semiconductor material and a dopant material. A mixing chamber(200) selectively stores an organic semiconductor material and a dopant material of a vapor phase. A nozzle(205) is included in the end of the mixing chamber to spray a stored organic material in a jet state. Passages(215,235) for carrying an organic material are formed between a first storage chamber and a second storage chamber and the mixing chamber. A plurality of on and off valves(300) individually controls the flow of carrier gas for carrying each organic material.
申请公布号 KR101357167(B1) 申请公布日期 2014.02.11
申请号 KR20100133241 申请日期 2010.12.23
申请人 发明人
分类号 H01L51/40 主分类号 H01L51/40
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