发明名称 |
Phase change memory electrode with sheath for reduced programming current |
摘要 |
An example embodiment is a phase change memory cell that includes a bottom contact and an electrically insulating layer disposed over the bottom contact. The electrically insulating layer defines an elongated via. Furthermore, a bottom electrode is disposed at least partially in the via. The bottom electrode includes a sleeve of a first electrically conductive material surrounding a rod of a second electrically conductive material. The first electrically conductive material and the second electrically conductive material have different specific electrical resistances. The memory cell also includes a phase change layer electrically coupled to the first electrode. |
申请公布号 |
US8648326(B2) |
申请公布日期 |
2014.02.11 |
申请号 |
US201113191490 |
申请日期 |
2011.07.27 |
申请人 |
BREITWISCH MATTHEW J.;RAJENDRAN BIPIN;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BREITWISCH MATTHEW J.;RAJENDRAN BIPIN |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|