| 摘要 |
Methods of manufacturing metal-insulator-metal capacitor structures, and the metal-insulator-metal capacitor structures obtained, are disclosed. In one embodiment, a method includes providing a substrate, forming on the substrate a first metal layer comprising a first metal, and using atomic layer deposition with an H2O oxidant to deposit on the first metal layer a protective layer comprising TiO2. The method further includes using atomic layer deposition with an O3 oxidant to deposit on the protective layer a dielectric layer of a dielectric material, and forming on the dielectric layer a second metal layer comprising a second metal. In another embodiment, a metal-insulator-metal capacitor includes a bottom electrode comprising a first metal, a protective layer deposited on the bottom electrode and comprising TiO2, a dielectric layer deposited on the protective layer and comprising a dielectric material, and a top electrode formed on the dielectric layer and comprising a second metal. |
