| 摘要 |
A selective oxidation treatment method in which plasma of a hydrogen gas and an oxygen containing gas is allowed to act on an object to be treated, and in which silicon and a metallic material are exposed in the surface, within a treatment container of a plasma treatment apparatus comprises: after the supply of the hydrogen gas from a hydrogen gas supply source is initiated by using a first inert gas, which passes through a first supply path, as a carrier gas, initiating the supply of the oxygen containing gas from an oxygen containing gas supply source by using a second inert gas, which passes through a second supply path, as a carrier gas before the plasma is ignited; igniting the plasma of a treatment gas including the oxygen containing gas and the hydrogen gas within the treatment container; and selectively oxidizing the silicon by the plasma. |
