| 摘要 |
An integrated circuit (IC) comprising: a bond pad; a first metallization layer under and in direct contact with the bond pad; a second metallization layer under the first metallization layer; low-k dielectric material between the first and second metallization layers, wherein: a portion of the second metallization layer under the bond pad comprises two or more metal lines that are (i) part of two more distinct routing paths in the IC and (ii) separated by low-k dielectric material; at least one of the metal lines in the portion of the second metallization layer under the bond pad is directly connected to the first metallization layer by one or more metal features in the low-k dielectric material; and at least one of the metal lines in the portion of the second metallization layer under the bond pad is not directly connected to the first metallization layer by any metal feature in the first low-k dielectric material. |
