| 摘要 |
PURPOSE: A method for easily manufacturing metal chalcogenide thin films is provided to form the chalcogenide thin films from a single layer to double layers using a chemical vapor deposition. CONSTITUTION: A method for easily manufacturing metal chalcogenide thin films comprises following steps. A metal thin film (20) is formed in a base material (10). Chalcogen gas is supplied to the metal thin film. A metal chalcogen thin film (30) marked chemical formula 1 is formed by reacting with the chalcogen gas. The metal thin film is formed one of the sputtering, E-beam evaporator, thermal evaporation, ion cluster beam, pulsed laser deposition methods. |
