| 摘要 |
1,267,323. Crystallizing gallium phosphide. HITACHI Ltd. 26 May, 1970 [28 May, 1969], No. 25330/70. Heading BIG. [Also in Divisions C4 and H1] A light-emitting diode comprises a p type substrate 1 of a III-V compound semiconductor such as Ga P having grown thereon an epitaxial layer 3 of n type Ga P containing a p type layer 2 formed by diffusion of p type dopant from the substrate 1 into the layer 3. Since the p type dopant, e.g. Zn, diffuses faster than unwanted contaminants such as oxygen the p-n junction between the layers 2 and 3 is uncontaminated and light emission therefrom is efficient and of the desired wavelength. The substrate 1 may be solution grown, and the epitaxial layer 3 may be vapour deposited. Preferably, however, the layer 3 is grown by liquid phase epitaxy, e.g. from a Ga solution saturated with Ga P and containing Te, Se, S or Sn as an n type dopant and nitrogen in InN or Ga N as a light emission augmenting agent. The epitaxial deposition may take place in a stream of hydrogen or hydrogen of argon, optionally containing ammonia as a further source of nitrogen dopant. |
