| 摘要 |
Provided are a gas barrier film which has extremely excellent gas barrier performance and high durability, a manufacturing method thereof, and an electronic device using the same. The gas barrier film having at least two gas barrier layers which contain at least Si, O and N and are laminated on a substrate, in which the total thicknesswise composition distribution of the gas barrier layers includes both a thicknesswise continuous region which has a thickness of 20 nm or more and satisfies the following composition range (A) and a thicknesswise continuous region which has a thickness of 50 nm or more and satisfies the following composition range (B) in this order from the substrate side. (A): when the composition of the gas barrier layer is represented by SiOwNx, w ‰¥ 0.8, x ‰¥ 0.3, and 2w + 3x ‰¤ 4, and (B): when the composition of the gas barrier layer is represented by SiOyNz, 0 < y ‰¤ 0.55 and z ‰¥ 0.55, and 2y + 3z ‰¤ 4. |
