| 摘要 |
A method for producing a single crystal of tungsten-tantalum alloy includes production of bars by hydrostatic pressing of preliminary mixed powders of tungsten and tantalum for 200-300 seconds, following heat treatment of bars in vacuum with a residual pressure of P ≤ 8·10Pa, sintering of bars in vacuum at a temperature of T ≥ for at least two hours with following cooling with the rate of 300 °C/hour, remelting of the bars into the polycrystalline blank, growing monocrystalline ingot from it by a method of crucible less zone melting with an electron beam heating, which ends with a pair melting with the seeding at the ingot end of the odd melting. The hydrostatic pressing is carried out at a pressure of 200-250 MPa, following thermal treatment of bars, their sintering is carried out under continuous vacuum pumping, and the process of growing a single-crystal ingot is carried out on the seed with axial orientation <111> with a rate of zone recrystallization (2.0-4.0) ·10m/s, at that the content of tantalum in the single crystal is of 3.0-12.0 wt. %. |
