| 摘要 |
PURPOSE: A method for growing nanowires is provided to grow nanowires with different energy band gaps under the same growing conditions by adjusting an area with nanoholes and an area without nanoholes when a pattern is formed on a substrate by a nano-imprinting process. CONSTITUTION: A method for growing nanowires includes the steps of: preparing a substrate (110); forming a nanowire growing layer on the substrate; forming a pattern by imprinting the nanowire growing layer using a mold with a plurality of protrusions; separating the mold from the substrate; and providing III-V groups of family compounds on the surface of the substrate which is exposed through the holes of the pattern, and forming nanowires (140) on the substrate. The pattern is divided into a first area and a second area. The first area has a plurality of holes corresponding to the protrusions. The width of the second area is different from the width of the first area, and there is no hole in the second area. The wavelengths of the nanowires vary by the difference in width of the first and second areas. |
